Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes
Author:
Publisher
Cambridge University Press (CUP)
Subject
Instrumentation
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1. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
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4. 6. This work was supported by ARPA-E award DE-AR0000868. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
5. Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
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