Fabrication and Electrical Characterization of p/n PbSe Diodes

Abstract

Lead selenide (PbSe) diodes were fabricated using a magnetron sputtering process system with a pulsed DC power supply and a 2-inch PbSe target with a purity of 5N. For p-type PbSe thin films, the process variable was the oxygen ratio in the mixed gas of argon and oxygen. The electrical characteristics of the thin films were observed after heat treatment. For the n-type PbSe, nickel (Ni) was used as a doping material. The deposition and doping were performed simultaneously using a co-sputtering method. During co-sputtering, the input power of the Ni sputter gun was adjusted as a process variable. Hall measurement experiments were performed to measure the doping concentration and resistivity of both the p-type and n-type PbSe semiconducting films. The maximum doping concentration was 2.33×10¹⁹ cm^-3 for p-type PbSe and 7.55×10²⁰ cm^-3 for n-type PbSe thin films, respectively. The p-n junction IV curve showed that the lowest forward voltage generation point, V_f, was 1.5 V and the reverse breakdown voltage was -4.3 V. In the photocurrent measurement, the photo sensitivities of the heat-treated samples were higher than that of the non-treated sample, and the maximum value was 5.148. Photo responsivity was also higher in the heat-treated samples. Its maximum was 0.7306 mA / W.