Direct electron beam patterning of electro-optically active PEDOT:PSS
Author:
Doshi Siddharth12ORCID, Ludescher Dominik3ORCID, Karst Julian3ORCID, Floess Moritz3ORCID, Carlström Johan2, Li Bohan2ORCID, Mintz Hemed Nofar1ORCID, Duh Yi-Shiou2, Melosh Nicholas A.1, Hentschel Mario3ORCID, Brongersma Mark2ORCID, Giessen Harald3ORCID
Affiliation:
1. Department of Materials Science and Engineering , Stanford University , Stanford , CA 94305 , USA 2. Geballe Laboratory for Advanced Materials , Stanford University , 476 Lomita Mall , Stanford , CA 94305 , USA 3. 4th Physics Institute and Research Center SCoPE , University of Stuttgart , Pfaffenwaldring 57, 70569 Stuttgart , Germany
Abstract
Abstract
The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and −3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.
Funder
Bundesministerium für Bildung und Forschung European Research Council Stanford Graduate Fellowship Baden-Württemberg Stiftung Ministerium für Wissenschaft, Forschung und Kunst Baden-Württemberg Department of Energy Stanford Deutsche Forschungsgemeinschaft Universität Stuttgart Airforce Office of Sponsored Research
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
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