Compositionally graded ba1-xsrxtio3 ferroelectric thin films layer-by-layer deposited by pulsed laser abalation-Reference-Cited by-同舟云学术

Compositionally graded ba1-xsrxtio3 ferroelectric thin films layer-by-layer deposited by pulsed laser abalation

Published:2001-01 Issue:1-4 Volume:36 Page:73-82
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Zhu Xinhua¹,Lu Shengguo¹²,Choy Chung Loong²,Chan Helen Lai Wah²,Wong Kin Hung²

Affiliation:

1. a National Laboratory of Solid State Microstructures, Department of Physics , Nanjing University , Nanjing, 210093, China

2. b Department of Applied Physics and Materials Research Centers , The Hong Kong Polytechnic University Hung Horn , Kowloon, Hong Kong, China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108015529

Reference11 articles.

1. Dielectric materials for applications in microwave communications

2. HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)

3. Temperature dependence of conventional and effective pyroelectric coefficients for compositionally graded BaxSr1−xTiO3 films

4. Graded Dielectric Thin Films Prepared by Chemical Solution Deposition

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