Xerographic determination of electron drift mobility in a-Si: H
Author:
Affiliation:
1. a Xerox Corporation , Webster , New York , 14580 , U.S.A
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642817408246508
Reference9 articles.
1. Space charge perturbed transient transport in a dispersive medium a-As2Se3
2. Allan , D. Le Comber , P. G. and Spear , W. E. 1977. Amorphous and Liquid Semiconductors, Edited by: Spear , W. E. 323CICL: University of Edinburgh.
3. Discharge Characteristics of Photoconducting Insulators
4. Photocurrent reversal and time-of-flight in amorphous silicon-hydrogen films
5. Study of the electronic structure of amorphous silicon using reverse‐recovery techniques
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2. Kinetics of xerographic discharge by surface charge injection;Journal of Applied Physics;1992-10
3. Amorphous silicon bibliography 1984 update introduction;Solar Cells;1985-08
4. The electrical characterization of surfaces, interfaces and contacts to a-Si:H;Philosophical Magazine B;1985-01
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