Interaction of KCN solutions with Si-based thin films-Reference-Cited by-同舟云学术

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Interaction of KCN solutions with Si-based thin films

Published:2015-03-02 Issue:2 Volume:3 Page:119-127
ISSN:2224-3682
Container-title:Journal of the Chinese Advanced Materials Society
language:en
Short-container-title:Journal of the Chinese Advanced Materials Society

Author:

Pincik Emil,Brunner Robert,Kobayashi Hikaru,Takahashi Masao,Mikula Milan

Funder

Japan Society for Promotion of Science (JSPS) and by the following Slovakian agencies: APVV

Publisher

Informa UK Limited

Link

http://www.tandfonline.com/doi/pdf/10.1080/22243682.2015.1011693

Reference19 articles.

1. Passivation of Defect States in Amorphous and Crystalline Si by use of Cyanide Treatment and Improvement of Solar Cell Characteristics

2. Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

3. Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

4. Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On KCN treatment effects on optical properties of Si-based bilayers;Journal of Electrical Engineering;2019-09-28

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