A model for the build-up of disordered material in ion bombarded Si-Reference-Cited by-同舟云学术

A model for the build-up of disordered material in ion bombarded Si

Published:1977-01 Issue:1-2 Volume:32 Page:19-24
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Nelson R. S.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577708237451

Reference7 articles.

1. 1970. International Conference on Ion Implantation in Semiconductors. 4–7th May1970. California: Gordon and Breach. (b) European Conference on Ion Implantation, 7–9th September 1970. at Reading, England (Peter Peregrinus Ltd.); (c) Ion Implantation, G. Dearnaley, J. H. Freeman, R. S. Nelson and J. H. Stephen, 1972 (North Holland).

2. Nucleation of damage centres during ion implantation of silicon

3. Ionization, thermal, and flux dependences of implantation disorder in silicon

4. A new mechanism for interstistitial migration

5. Nelson, R. S. Proc. Int. Conf. Radiation Damage in Semiconductors. Reading. pp.140

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