Silicon surface studies by means of proton backscattering and proton induced X-Ray emission-Reference-Cited by-同舟云学术

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Silicon surface studies by means of proton backscattering and proton induced X-Ray emission

Published:1973-01 Issue:3-4 Volume:17 Page:245-252
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Van Der Weg W. F.,Kool W. H.,Roosendaal H. E.,Saris F. W.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232621

Reference22 articles.

1. THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING

2. Analysis of amorphous layers on silicon by backscattering and channeling effect measurements

3. Energy Spectra of keV Backscattered Protons as a Probe for Surface-Region Studies

4. Rutherford Scattering and Channeling: A Useful Combination for Studying Crystal Surfaces

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Specific applications of a 350 kv ion accelerator for PIXE analysis of solid state samples;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1984-04

2. Chapter 5 Analysis by heavy ion induced X-ray emission;Progress in Crystal Growth and Characterization;1984-01

3. Chapter 2 Rutherford Backscattering Spectroscopy (R.B.S.);Progress in Crystal Growth and Characterization;1984-01

4. Laser processing of UHV-deposited thin silicon films;Applications of Surface Science;1982-01

5. (100) and (110) SiSiO2 interface studies by MeV ion backscattering;Surface Science;1980-10

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