The isothermal annealing of boron implanted silicon-Reference-Cited by-同舟云学术

The isothermal annealing of boron implanted silicon

Published:1971-01 Issue:1-2 Volume:7 Page:1-6
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Seidel T. E.,Mac Rae A. U.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577108232558

Reference24 articles.

1. Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ions

2. Galabtinova, I. A., Gusev, V. M., Naumenko, V. G. and Titov, V. V. 1967.‘Applications of Ion Beams to Semiconductor Technology’ (Grenoble), Edited by: Glotin, P. 503Paris: Editions Ophyrs.

3. 1968.Soviet Phys. Semicond., 2

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