Doping Profile Meter for Semiconductor Structures-Reference-Cited by-同舟云学术

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Doping Profile Meter for Semiconductor Structures

Published:2024-08-16 Issue: Volume: Page:1-10
ISSN:1536-6367
Container-title:Measurement: Interdisciplinary Research and Perspectives
language:en
Short-container-title:Measurement: Interdisciplinary Research and Perspectives

Author:

Manyakhin Fedor¹,Varlamov Dmitry²^ORCID,Morketsova Lyudmila³,Skvortsov Arkady¹^ORCID,Nikolaev Vladimir⁴^ORCID

Affiliation:

1. Dynamics, Strength of machines and Resistance of Materials, Moscow Polytechnic University

2. Industrial Electronics, Moscow Polytechnic University

3. Computer-Aided Engineering and Design, Moscow Polytechnic University

4. Optoelectronics, Moscow Polytechnic University

Funder

Ministry of Science and Higher Education for universities

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/15366367.2024.2390340

Reference18 articles.

1. Deep-level recombination spectroscopy in GaP light-emitting diodes

2. The fundamental operation mechanisms of nc-SiOX≥0:H based tunnel recombination junctions revealed

3. A generalized theoretical approach for solar cells fill factors by using Shockley diode model and Lambert W-function: A review comparing theory and experimental data

4. Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure

5. Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell

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