Valence band structure of biaxial strained Germanium for hole transport calculation-Reference-Cited by-同舟云学术

Valence band structure of biaxial strained Germanium for hole transport calculation

Published:2022-05-12 Issue:11 Volume:120 Page:
ISSN:0026-8976
Container-title:Molecular Physics
language:en
Short-container-title:Molecular Physics

Author:

Ma Jian-Li¹,Zhang Yu¹,Fu Zhi-Fen¹,Zhang He-Ming²

Affiliation:

1. School of Mechanics and Optoelectronic Physics, Anhui University of Science and Technology, Huainan, People’s Republic of China

2. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, People’s Republic of China

Publisher

Informa UK Limited

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Molecular Biology,Biophysics

Link

https://www.tandfonline.com/doi/pdf/10.1080/00268976.2022.2074561

Reference28 articles.

1. GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs

2. Growth and electrical properties of in situ Sb-doped Ge1− x Sn x epitaxial layers for source/drain stressor of strained-Ge transistors

3. Layout Study of Strained Ge-Based pMOSFETs Integrated With S/D GeSn Alloy and CESL by Using Process-Oriented Stress Simulations

4. Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors

5. Plasma Hsp90 levels in patients with systemic sclerosis and relation to lung and skin involvement: a cross-sectional and longitudinal study

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