Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors-Reference-Cited by-同舟云学术

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Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors

Published:2020-04-19 Issue:9 Volume:57 Page:1015-1021
ISSN:0022-3131
Container-title:Journal of Nuclear Science and Technology
language:en
Short-container-title:Journal of Nuclear Science and Technology

Author:

Zhang Xiang¹²³,Li Yudong¹²,Wen Lin¹²,Feng Jie¹²,Zhou Dong¹²,Cai Yulong¹²³,Liu Bingkai¹²³,Fu Jing¹²³,Guo Qi¹²

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Urumqi, China

2. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China

3. University of Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

West Light Foundation of the Chinese Academy of Sciences

Publisher

Informa UK Limited

Subject

Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/00223131.2020.1751323

Reference20 articles.

1. Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

2. Characterization of Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Partial Etch Defect Researches in BSI CMOS Image Sensor Process Product;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

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