Electronic structure and bound excitons for defects in semiconductors from optical spectroscopy-Reference-Cited by-同舟云学术

Electronic structure and bound excitons for defects in semiconductors from optical spectroscopy

Published:1988-01 Issue:2 Volume:15 Page:111-151
ISSN:1040-8436
Container-title:Critical Reviews in Solid State and Materials Sciences
language:en
Short-container-title:Critical Reviews in Solid State and Materials Sciences

Author:

Monemar Bo A. I.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,General Chemical Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/10408438808243736

Reference126 articles.

1. Dean, P. J. and Herbert, D. C. 1979.Topics in Current Physics, Edited by: Excitons, K. and Cho. Vol. 14, 55Berlin: Springer-Verlag.

2. Monemar, B., Lindefeit, U. and Chen, W. M. Physica. Proceedings of the Second International Conference on Shallow Impurity Centers. 1986, Trieste. Vol. 146B, pp.256

3. Kohn, W. 1957.Solid State Physics, Edited by: Seitz, F. and Turnbull, D. Vol. 5, 257New York: Academic Press.

4. Electronic impurity levels in semiconductors

5. Capture Modes Revealed by the Study of Line Intensities in GaP Pair Spectra

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