Core structure and electronic bands of the 90° partial dislocation in silicon-Reference-Cited by-同舟云学术

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Core structure and electronic bands of the 90° partial dislocation in silicon

Published:1984-01 Issue:1 Volume:49 Page:41-61
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Lodge K. W.¹,Altmann S. L.¹,Lapiccirella A.²,Tomassini N.³

Affiliation:

1. a Department of Metallurgy and Science of Materials , University of Oxford Parks Road , Oxford , OX1 3PH, England

2. b C.N.R., Istituto Teoria Struttura Elettronica , Via Salaria 29,500, CP10, 00016 , Monterotondo, Stazione , Italy

3. c C.N.R., Istituto di Metodologia Avanzata Via Salaria 29,500 , CP10, 00016 , Monterotondo Stazione, Italy

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818408246499

Reference28 articles.

1. The electron states associated with the core region of the 60° dislocation in silicon

2. A note on the Peierls reconstruction of dislocation cores

3. Structure of dislocation cores in the silicon crystal

4. A valence force field for the silicon crystal

5. Valence orbital ionization potentials from atomic spectral data

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1. Mechanical Properties of Silicon Microstructures;Handbook of Silicon Based MEMS Materials and Technologies;2015

2. Mechanical properties of silicon microstructures;Handbook of Silicon Based MEMS Materials and Technologies;2015

3. Dislocations;Materials Science and Technology;2013-02-15

4. Mechanical Properties of Silicon Microstructures;Handbook of Silicon Based MEMS Materials and Technologies;2010

5. Do we really understand dislocations in semiconductors?;Materials Science and Engineering: B;2000-02

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