Defects and hydrogen in amorphous silicon nitride-Reference-Cited by-同舟云学术

Defects and hydrogen in amorphous silicon nitride

Published:1994-02 Issue:2 Volume:69 Page:307-326
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Robertson J.¹

Affiliation:

1. a National Power Laboratories , Leatherhead, Surrey , KT22 7SE , England

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639408240111

Reference75 articles.

1. Model for the Electronic Structure of Amorphous Semiconductors

2. Beyer , W. Wagner , H. and Mell , H. Materials Research Society Symposium Proceedings. Vol. 95, pp.317Pittsburgh, Pennsylvania: Materials Research Society.

3. Diffusion of hydrogen in low-pressure chemical vapor deposited silicon nitride films

4. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects

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