Fabrication strategies of flexible light sources based on micro/nano III-nitride LEDs

Author:

Bosch Julien1,Durand Christophe2,Alloing Blandine1,Tchernycheva Maria3

Affiliation:

1. CNRS, CRHEA, Sophia Antipolis, Université Côte d'Azur, Valbonne, France

2. CEA Grenoble INP, IRIG, PHELIQS, Université Grenoble Alpes, Grenoble, France

3. Centre de Nanosciences et de Nanotechnologies (C2N), University Paris-Saclay, Palaiseau, France

Funder

GANEX

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Reference71 articles.

1. Performance of high-power III-nitride light emitting diodes;Chen G.;Phys Status Solidi (A).,2008

2. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

3. Thermal stability of GaN investigated by Raman scattering;Kuball M.;MRS Online Proceedings Library (OPL).,1999

4. Wet chemical etching survey of III-nitrides;Vartuli S.C.;MRS Online Proceedings Library (OPL).,1997

5. Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

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