5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors

Published:2017-12-02 Issue:11-12 Volume:172 Page:922-930
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Gnana Prakash A. P.¹,Hegde Vinayakprasanna N.¹,Pradeep T. M.¹,Pushpa N.²,Bajpai P. K.³,Patel S. P.³,Trivedi Tarkeshwar³,Cressler J. D.⁴

Affiliation:

1. Department of Studies in Physics, University of Mysore, Mysore, India

2. Department of PG Studies in Physics, JSS College, Mysore, India

3. National Centre for Accelerator based Research, Bilaspur, India

4. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

Funder

Science and Engineering Research Board

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2017.1418874

Reference16 articles.

1. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

2. On the Potential of SiGe HBTs for Extreme Environment Electronics

3. Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics

4. Radiation effects on silicon bipolar transistors caused by 3–10MeV protons and 20–60MeV bromine ions

5. The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect;Chinese Physics B;2024-01-01

2. Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs;Radiation Effects and Defects in Solids;2019-11-05

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