Segregation mechanism of arsenic dopants at grain boundaries in silicon-Reference-Cited by-同舟云学术

Segregation mechanism of arsenic dopants at grain boundaries in silicon

Published:2021-01-01 Issue:1 Volume:1 Page:169-180
ISSN:2766-0400
Container-title:Science and Technology of Advanced Materials: Methods
language:en
Short-container-title:Science and Technology of Advanced Materials: Methods

Author:

Ohno Yutaka¹^ORCID,Yokoi Tatsuya²^ORCID,Shimizu Yasuo³⁴^ORCID,Ren Jie³,Inoue Koji³^ORCID,Nagai Yasuyoshi³^ORCID,Kutsukake Kentaro⁵^ORCID,Fujiwara Kozo¹^ORCID,Nakamura Atsutomo²^ORCID,Matsunaga Katsuyuki²^ORCID,Yoshida Hideto⁶^ORCID

Affiliation:

1. Institute for Materials Research, Tohoku University, Sendai, Japan

2. Graduate School of Engineering, Nagoya University, Nagoya, Japan

3. Institute for Materials Research, Tohoku University, Oarai, Japan

4. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Tsukuba, Japan

5. Center for Advanced Intelligence Project, RIKEN, Tokyo, Japan

6. SANKEN, Osaka University, Osaka, Japan

Funder

Multicrystalline informatics

JST/CREST

GIMRT Program in IMR, Tohoku University

‘Network Joint Research Centre for Materials and Devices: Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials’ program in ISIR, Osaka University

JSPS KAKENHI

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/27660400.2021.1969701

Reference85 articles.

1. Hybrid Silicon Nanowire Devices and Their Functional Diversity

2. Si and Ge based metallic core/shell nanowires for nano-electronic device applications

3. High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

4. Analyzing the channel dopant profile in next-generation FinFETs via atom probe tomography

5. Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study;Journal of Applied Physics;2022-08-21

2. Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding;Japanese Journal of Applied Physics;2022-04-01

3. Dynamics at crystal/melt interface during solidification of multicrystalline silicon;High Temperature Materials and Processes;2022-01-01