The Effect of Annealing on the Photoluminescence of Si/SiOx-Reference-Cited by-同舟云学术

The Effect of Annealing on the Photoluminescence of Si/SiOx

Published:2012-01 Issue:1 Volume:135 Page:89-93
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Yang Qinyu¹²,Wang Dexin¹²,Guo Ying¹²,Ding Ke¹²,Zhang Jing¹²

Affiliation:

1. a Department of Applied Physics , Donghua University , 2999 Renmin Rd., Songjiang District, Shanghai , 201620 , P.R. China

2. b Member of Magnetic Confinement Fusion Research Center, Ministry of Education , Donghua University , , 2999 Renmin Rd., Songjiang District, Shanghai , 201620 , P.R. China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2012.685410

Reference17 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Effects of silicon–hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition

3. Film thickness reduction of thermally annealed hydrogenated amorphous silicon prepared with plasma‐enhanced chemical vapor deposition

4. High-energy ion-beam-induced phase separation inSiOxfilms

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