Study on Surface Passivation Homogeneity of Gallium Antimonide using Photoluminescences-Reference-Cited by-同舟云学术

Study on Surface Passivation Homogeneity of Gallium Antimonide using Photoluminescences

Published:2012-01 Issue:1 Volume:136 Page:147-155
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

An Ning¹,Liu Guojun¹,Wei Zhipeng¹,Li Mei¹,Fang Fang²,Fang Xuan²,Hao Yongqin¹,Li Zhanguo¹,Sui Qingxue³,Zhang Zhimin³,Qu Yi¹

Affiliation:

1. a National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology

2. b School of Science, Changchun University of Science and Technology , Changchun , 130022 , China

3. c The Changchun Regional Office of the Armored Forces Representative Bureau, the Equipment Headquarters of the PLA , Changchun , 130103 , China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2012.686835

Reference21 articles.

1. Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures

2. Characterization of sulfur passivated n-GaSb using transmission electron microscopy and the influence of passivationon ohmic contact resistance

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1. Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser;Nanoscience and Nanotechnology Letters;2015-02-01

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