Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition

Published:2021-09-02 Issue:1 Volume:219 Page:55-61
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fang Dan¹,Chen Fang²,Fang Xuan¹³⁴,Zhang Haixi³,Li Jinhua¹,Wang Xiaohua¹,Ma Xiaohui¹,Wei Zhipeng¹

Affiliation:

1. College of Optical and Electronical Information Changchun University of Science and Technology, Changchun, China

2. National Institute of LED on Silicon Substrate, Nanchang University, Nanchang, P. R. China

3. School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, P.R. China

4. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, P.R. China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2021.1911353

Reference20 articles.

1. Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

2. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

3. Reduction of 1/f carrier noise in InGaAsP/InP heterostructures by sulphur passivation of facets

4. Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

5. Effects of passivating ionic films on the photoluminescence properties of GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride;The Journal of Physical Chemistry C;2023-08-17