Effects of La-Doped HfO <sub>2</sub> Films on Dielectric Properties by Sol-Gel Method-Reference-Cited by-同舟云学术

Effects of La-Doped HfO ₂ Films on Dielectric Properties by Sol-Gel Method

Published:2023-10-27 Issue:1 Volume:239 Page:30-42
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Tongpeng Suparat¹^ORCID,Wannapaiboon Suttipong²,Amonpattaratkit Penphitcha²,Silawong Praphaphon³,Janphuang Pattanaphong²,Pattanakul Rungrueang²,Jiansirisomboon Sukanda¹^ORCID

Affiliation:

1. School of Ceramic Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, Thailand

2. Synchrotron Light Research Institute (Public Organization), Nakhon Ratchasima, Thailand

3. Department of Metallurgical Engineering, Faculty of Engineering, Rajamangala University of Technology Isan Khonkaen Campus, Thailand

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2023.2234607

Reference20 articles.

1. Influence of high energy ion irradiation on structural, morphological and optical properties of high-k dielectric hafnium oxide (HfO2) thin films grown by atomic layer deposition

2. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors

3. Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

4. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon

5. Thermochemical description of dielectric breakdown in high dielectric constant materials

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