A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts
Author:
Affiliation:
1. Faculty of Science, Department of Physics, University of Dicle, Diyarbakır, Turkey
2. Faculty of Engineering and Natural Sciences, Engineering Physics Department, Istanbul Medeniyet University, Istanbul, Turkey
Funder
not received research grants
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/1448837X.2020.1857564
Reference64 articles.
1. Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes
2. The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements
3. Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes
4. Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures
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