Effect of anomalous drift during ion implantation-Reference-Cited by-同舟云学术

Effect of anomalous drift during ion implantation

Published:1985-01 Issue:3-4 Volume:88 Page:249-255
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Aleksandrov P. A.,Baranova E. K.,Beloshitskii V. V.,Demakov K. D.,Starostin V. A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578608207484

Reference14 articles.

1. Baranova, E. K., Gusev, V. M., Gureev, V. M., Martynenko, Yu. V. and Starinin, K. V.Tirreffect on defect distribution profiles in Si irradiated with ions of different masses. Proceedings of Ninth International Meeting on Ion Implantation Physics. pp.282Hungary: Budapest.

2. Proton‐enhanced diffusion and vacancy migration in silicon

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