Some electrical measurements on gaseous ion implanted metallic and insulating thin films
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578208222828
Reference10 articles.
1. Ruge, 1. and Graul, J., eds. Second International Conference on Ion Implantation in Semiconductors. Berlin-Heidelberg: Springer-Verlag.
2. Ion Implantation in Semiconductors and Other Materials
3. Reactive ion bombardment of tantalum thin film resistors
4. Changes in the phase structure and formation of chemical compounds by ion implantation of tantalum thin films
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4. Ion-beam mixing at the Fe/Al2O3interface as revealed by conversion-electron Mössbauer spectroscopy;Physical Review B;1987-02-01
5. Differences in ion beam mixing at Fe:c-Si and Fe:a-Si interfaces as revealed by Mössbauer spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
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