The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon-Reference-Cited by-同舟云学术

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The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

Published:1980-01 Issue:3-4 Volume:52 Page:149-152
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Akhmetov V. D.,Bolotov V. V.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578008210027

Reference12 articles.

1. Bolotov, V. V., Vasiljev, A. V. and Smirnov, L. S. 1977.Radiation Effects in Semiconductors, Inst. of Phys.472–477. Bristol and London Conf. Ser. N31

2. Electron irradiation damage in silicon containing carbon and oxygen

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon;Journal of Materials Science: Materials in Electronics;2014-08-27

2. Vacancy-oxygen defects in silicon: the impact of isovalent doping;Journal of Materials Science: Materials in Electronics;2014-04-26

3. Impact of isovalent doping on radiation defects in silicon;Journal of Applied Physics;2013-09-21

4. Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si;Journal of Applied Physics;2013-03-21

5. Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective;Journal of Applied Physics;2012-12-15

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