Excitonic contribution to photoluminescence in amorphous semiconductors-Reference-Cited by-同舟云学术

Excitonic contribution to photoluminescence in amorphous semiconductors

Published:2002-05 Issue:7 Volume:82 Page:855-871
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Singh Jai¹,Aoki T.²,Shimakawa K.³

Affiliation:

1. a Faculty of Site B-28 , Northern Territory University , Darwin , Northern Territory , 0909 , Australia

2. b Department of Electronics and Computer Engineering and Joint Research Center of High Technology , Tokyo Institute of Polytechnics , Atsugi , 243-0297 , Japan

3. c Department of Electrical and Electronic Engineering , Gifu University , Gifu , 501-1193 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642810208224374

Reference31 articles.

1. Chapter 12 Amorphous Semiconductor Superlattices

2. Lifetime distribution in a-Si:H: geminate-, nongeminate- and auger-processes

3. Aoki , T. Proceedings of the 11th International School on Condensed Matter Physics. September1–42000. pp.57Bulgaria: Varna.

4. Reversible photoinduced changes of electronic transport in narrow-gap amorphousSb2Se3

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