Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in AlxGa1−xAs/InGaAs (X=0.75) pseudomorphic high electron mobility transistors
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Published:2003-09-01
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ISSN:1071-1023
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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