Scanning tunneling microscopy study of organometallic molecules adsorbed on a GaAs(001)-2×4 surface

Author:

Kuramochi Hiromi1,Cui Jie1,Iwai Hidekazu1,Ozeki Masashi1

Affiliation:

1. Joint Research Center for Atom Technology (JRCAT)–Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba 305-0046, Japan

Abstract

The interaction of tertiarybutylarsine (TBAs), triisobutylgallium (TiBGa) and trisdimethylaminoarsenic (TDMAAs) with the GaAs(001)-2×4 surface is studied by scanning tunneling microscope. No adsorbates were observed after TBAs exposure at room temperature. In the case of TiBGa and TDMAAs, adsorbates were observed on the As dimer rows. They were adsorbed randomly at low coverage and formed a 4×4 structure at a full monolayer. Weak interaction between molecules and the GaAs surface is expected because the 2×4 structure of the clean surface was kept under the adsorbates.

Publisher

American Vacuum Society

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03

2. Indium supply from triisopropylindium onto a GaAs(001) surface at room temperature;Applied Physics Letters;2002-11-18

3. Decomposition of trisdimethylaminoarsenic and As nucleation on GaAs(001)-2×4 at low temperature;Applied Physics Letters;2002-07-01

4. Initial surface reactions between Cl2 molecules and the GaAs (001) 2×4 surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena;2001-11-01

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