Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer

Abstract

A high resolution x-ray diffractometer is described in which a compact four-crystal monochromator produces a highly parallel and monochromatic incident beam of tuneable wavelength (divergence Δθ=5″, wavelength band Δλ/λ=2.3×10−5, intensity 3×104 photons/s mm2). The instrument is very suitable for the nondestructive measurement of concentration depth profiles produced in semiconductor single crystals by epitaxy, diffusion, or implantation. The equipment is useful for measuring x-ray rocking curves of any lattice plane of any material and also lattice constants can be determined on absolute scale using the Bond procedure. A special solution has been derived from the dynamical theory of x-ray diffraction, which gives the reflectivity of an absorbing layer as a function of layer thickness. This new expression takes the effects of absorption and extinction into account and has been used to determine the layer thickness of epitaxial layers grown on [001] oriented InP.