E-mode AlGaN/GaN HEMTs using p-NiO gates-Reference-Cited by-全球学者库

E-mode AlGaN/GaN HEMTs using p-NiO gates

Published:2023-11-08 Issue:6 Volume:41 Page:
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:

Author:

Chiang Chao-Ching¹^ORCID,Wan Hsiao-Hsuan¹^ORCID,Li Jian-Sian¹^ORCID,Ren Fan¹^ORCID,Yoo Timothy Jinsoo²^ORCID,Kim Honggyu²^ORCID,Pearton S. J.²^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Florida 1 , Gainesville, Florida 32606

2. Department of Materials Science and Engineering, University of Florida 2 , Gainesville, Florida 32606

Abstract

Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A direct comparison with Schottky-gated devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from −0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 μm drain-source separation. The subthreshold swing decreased from 181 mV/dec for Schottky-gated HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO gates for e-mode AlGaN/GaN HEMT operation.

Funder

Department of the Defence, Defence Thread Reduction Agency

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0003119/18202466/062205_1_6.0003119.pdf

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