Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement
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Published:2021-08-06
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ISSN:2166-2746
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Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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