High temperature isotropic and anisotropic etching of silicon carbide using forming gas
Author:
Affiliation:
1. Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550
Funder
Lawrence Livermore National Laboratory
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/am-pdf/10.1116/6.0000533
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