Quantification of cesium surface contamination on silicon resulting from SIMS analysis-Reference-Cited by-同舟云学术

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Quantification of cesium surface contamination on silicon resulting from SIMS analysis

Published:2012-05 Issue:3 Volume:30 Page:031203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Penley C.,Stevie F. A.,Griffis D. P.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3698400

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TOF SIMS analyses of stray Ga during FIB milling;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-11

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