High breakdown voltage Au/Pt/GaN Schottky diodes-Reference-Cited by-同舟云学术

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High breakdown voltage Au/Pt/GaN Schottky diodes

Published:2000-07 Issue:4 Volume:18 Page:1135-1138
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Dang G. T.,Zhang A. P.,Mshewa M. M.,Ren F.,Chyi J.-I.,Lee C.-M.,Chuo C. C.,Chi G. C.,Han J.,Chu S. N. G.,Wilson R. G.,Cao X. A.,Pearton S. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582312

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low R_on;IEEE Electron Device Letters;2024-07

2. Research progress and prospect of GaN Schottky diodes;Journal of Physics D: Applied Physics;2023-12-04

3. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices;Micromachines;2023-10-31

4. Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation;Japanese Journal of Applied Physics;2023-09-15

5. Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage;Applied Physics Letters;2022-11-14

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