Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
Author:
Affiliation:
1. Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany
2. micro resist technology GmbH, Köpenicker Str. 325, 12555 Berlin, Germany
Funder
EC | Directorate-General for Research and Innovation
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5003476
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Chemical Structures on E-Beam Lithography Performance of Polysilsesquioxanes;ACS Applied Materials & Interfaces;2024-09-12
2. Studies on resolution with ZEP530A for EUV mask;Novel Patterning Technologies 2024;2024-04-09
3. Main chain scission resists towards high-NA EUV lithography;Advances in Patterning Materials and Processes XLI;2024-04-09
4. 7.4 nm linewidth Pt nanowires by electron-beam lithography using non-chemically amplified positive-tone resist and post-exposure bake;Japanese Journal of Applied Physics;2024-04-01
5. Update on main chain scission resists in Zeon for high-NA EUV lithography;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21
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