Exploration of Electronic Structure and Optical Properties Hafnium (IV) Oxide and Its 12% Si, Ge and Sn with Material Data Analysis by Computational Methods-Reference-Cited by-同舟云学术

Exploration of Electronic Structure and Optical Properties Hafnium (IV) Oxide and Its 12% Si, Ge and Sn with Material Data Analysis by Computational Methods

Published:2023 Issue: Volume: Page:245-258
ISSN:1876-1100
Container-title:The Fourth Industrial Revolution and Beyond
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Author:

Chakma Unesco,Kumer Ajoy,Hossain Tomal,Sayed Hossain Md.,Monsur Alam Md.,Khandakar Nusrat Jahan,Shariful Islam Md.,Shaikh Rubel,Hazrat Ali Md.

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-19-8032-9_18

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5. Fantini, A., Wouters, D.J., Degraeve, R., Goux, L., Pantisano, L., Kar, G., Chen, Y.-Y., Govoreanu, B., Kittl, J.A., Altimime, L.: Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures. In: 2012 4th IEEE International Memory Workshop, pp. 1–4 (2012)

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