A Single Line 8T SRAM Bit Cell with Robust Read, Hold Stability and Low Power
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-7862-5_41
Reference21 articles.
1. Rawat, B., & Mittal, P. (2021). Single bit line accessed high-performance ultra-low voltage operating 7T static random access memory cell with improved read stability. International Journal of Circuit Theory and Applications, 49(5), 1435–1449.
2. Rawat, B., & Mittal, P. (2022). A reliable and temperature variation tolerant 7T SRAM cell with single bitline configuration for low voltage application. Circuits, Systems, and Signal Processing, 41(5), 2779–2801.
3. Rawat, B., & Mittal, P. (2021). A 32 nm single-ended single-port 7T static random access memory for low power utilization. Semiconductor Science and Technology, 17, 36095006. https://doi.org/10.1088/1361-6641/ac07c8
4. Oh, T. W., Jeong, H., Kang, K., Park, J., Yang, Y., & Jung, S. O. (2017). Power-gated 9T SRAM cell for low-energy operation. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 25(3), 1183–1187.
5. Pal, S., & Islam, A. (2015). Variation tolerant differential 8T SRAM cell for ultralow power applications. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 35(4), 549–558.
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