Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon-Reference-Cited by-同舟云学术

Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon

Published:1977-10 Issue:2 Volume:14 Page:189-191
ISSN:0340-3793
Container-title:Applied Physics
language:en
Short-container-title:Appl. Phys.

Author:

Foti G.,Rimini E.,Vitali G.,Bertolotti M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00883088.pdf

Reference7 articles.

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2. J.F. Ready: J. Appl. Phys.36, 462 (1965)

3. M. Bertolotti, L. Stagni, G. Vitali, L. Muzii: J. Appl. Phys.42, 5893 (1971)

4. A. Kh.Antonenko, N. N. Gerasimenko, A. V.Dvurechenskii, L.S.Smirnov, G.M.Tseitlin: Sov. Phys. Semicond,10, 81 (1976).

5. G.A. Kachurin, V.A. Bogatyriov, S.I. Romanov, L.S. Smirnov: Int. Conf. on Ion Implantation in Semiconductors and Other Materials, Boulder, Colo. (1976) p. 301

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