Titanium oxide artificial synaptic device: Nanostructure modeling and synthesis, memristive cross-bar fabrication, and resistive switching investigation-Reference-Cited by-同舟云学术

Titanium oxide artificial synaptic device: Nanostructure modeling and synthesis, memristive cross-bar fabrication, and resistive switching investigation

Published:2023-04-20 Issue:7 Volume:16 Page:10222-10233
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Avilov Vadim I.,Tominov Roman V.,Vakulov Zakhar E.,Zhavoronkov Lev G.,Smirnov Vladimir A.

Publisher

Tsinghua University Press

Link

https://link.springer.com/content/pdf/10.1007/s12274-023-5639-5.pdf

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