Sensing metrics of a dual-cavity single-gate MOSHEMT
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s40042-023-00885-9.pdf
Reference25 articles.
1. S.S. Mahajan, A. Malik, R. Laishram, S. Vinayak, Performance enhancement of gate-annealed AlGaN/GaN HEMTs. J. Korean Phys. Soc. 70, 533–538 (2017). https://doi.org/10.3938/jkps.70.533
2. J. Panda, K. Jena, T.R. Lenka, Comparative analysis of GaN based MOSHEMT devices for RF applications, in: Proc. 2015 IEEE Int. Conf. Electr. Comput. Commun. Technol. ICECCT 2015, Institute of Electrical and Electronics Engineers Inc., 2015. https://doi.org/10.1109/ICECCT.2015.7226141
3. K. Jena, R. Swain, T.R. Lenka, Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT. J. Korean Phys. Soc. 67, 1592–1596 (2015). https://doi.org/10.3938/jkps.67.1592
4. K. Husna Hamza, D. Nirmal, A review of GaN HEMT broadband power amplifiers. AEU - Int. J. Electron. Commun. 116, 153040 (2020). https://doi.org/10.1016/j.aeue.2019.153040
5. Z. Hu, R. Jana, M. Qi, S. Ganguly, B. Song, E. Kohn, D. Jena, H.G. Xing, Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region, Device Res. Conf. Conf. Dig. DRC. 1, 27–28 (2014). https://doi.org/10.1109/DRC.2014.6872283
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1. Erratum: Sensing metrics of a dual-cavity single-gate MOSHEMT;Journal of the Korean Physical Society;2023-08-11
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