Numerical Analysis of Melt Flow and Interface Deflection during the Growth of Directional Solidified Multi-Crystalline Silicon Ingots of Three Different Dimension-Reference-Cited by-同舟云学术

Numerical Analysis of Melt Flow and Interface Deflection during the Growth of Directional Solidified Multi-Crystalline Silicon Ingots of Three Different Dimension

Published:2021-04-08 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kumar M. Avinash,Aravindan G.,Srinivasan M.,Ramasamy P.,Kakimoto K.

Funder

The Ministry of New and Renewable Energy

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-021-01096-2.pdf

Reference17 articles.

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3. Jiptner K, Gao B, Harada H, Miyamura Y, Fukuzawa M, Kakimoto K, Sekiguchi T (2014) Thermal stress induced dislocation distribution in directional solidification of Si for PV application. J Cryst Growth 408:19–24

4. Li Z, Liu L, Liu X, Zhang Y, Xiong J (2012) Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot. J Cryst Growth 360:87–91

5. Li Z, Liu L, Ma W, Kakimoto K (2011) Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells. J Cryst Growth 318:304–312

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