Numerical Modeling of Thermal and Flow Field in Directional Solidification Silicon under Vertical Magnetic Field-Reference-Cited by-同舟云学术

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Numerical Modeling of Thermal and Flow Field in Directional Solidification Silicon under Vertical Magnetic Field

Published:2020-11-24 Issue:1 Volume:14 Page:99-105
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Su Wenjia^ORCID,Yang Wei,Li Jiulong,Li Chen,Wang Junfeng

Funder

The Project is supported by Key Research and Development Program of Jiangsu Province of China

Industry-University-Research Project

the National Natural Science Foundation for Young Scholars of China

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-020-00843-1.pdf

Reference23 articles.

1. Rao S, Chen XH, Zhang F, He L, Luo Y, Xiong H, Hu Y, Wang F, Song B (2020) Influence of modified bottom insulation on the seeded directional solidification process for high-performance multi-crystalline silicon. Vacuum 172:108969. https://doi.org/10.1016/j.vacuum.2019.108969

2. Li Z, Liu L, Nan X, Kakimoto K (2012) Role of Marangoni tension effects on the melt convection in directional solidification process for multi-crystalline silicon ingots. J Cryst Growth 346:40–44. https://doi.org/10.1016/j.jcrysgro.2012.02.031

3. Srinivasan M, Kesavan V, Ramasamy P (2018) Simulation of effect of surface tension in molten silicon during mc-silicon growth process for PV applications. Silicon 10:1087–1094. https://doi.org/10.1007/s12633-017-9575-4

4. Xie G, Lv G, Wang Y, Ma W, Yang X, Lei Y (2019) The influence of Marangoni effect on the growth quality of multi-crystalline silicon during the vacuum directional solidification process. Mater Sci Semicond Process 91:124–132. https://doi.org/10.1016/j.mssp.2018.11.015

5. Shao Y, Li Z, Yu Q, Liu L (2020) Control of melt flow and oxygen distribution using traveling magnetic field during directional solidification of silicon ingots. Silicon 12:2395–2404. https://doi.org/10.1007/s12633-019-00339-7

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