Effects of O2 and N2 Gas Concentration on the Formation of Ho2O3 Gate Oxide on 4H-SiC Substrate
Author:
Funder
Ministry of Higher Education, Malaysia
Universiti Malaya
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02040-8.pdf
Reference32 articles.
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3. Onik TAM, Hawari HF, Sabri MFM, Wong YH (2021) Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation. Appl Surf Sci 544:148949
4. Schilirò E, Fiorenza P, Di Franco S, Bongiorno C, Saggio M, Roccaforte F (2017) Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates. Phys Status Solidi A 214(4):1600365
5. Kurniawan T et al (2011) Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate. Mater Sci Semicond Process 14(1):13–17
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08
2. Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic;2024
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