Preparation and Characterization of UV-Enhanced GaN/ Porous Si Photodetector using PLA in Liquid

Author:

Fakhri Makram A.,Alwahib Ali A.,Salim Evan T.,Ismail Raid A.,Amir Husam Aldin A. Abdul,Ibrahim Raed Khalid,Alhasan Sarmad Fawzi Hamza,Alsultany Forat H.,Salim Zaid T.,Gopinath Subash C. B.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference95 articles.

1. Song H, Lee S (2007) Red light emitting solid state hybrid quantum dot–near-UV GaN LED devices. Nanotechnology 18(25):255202

2. Ikawa Y, Lee K, Ao J-P, Ohno Y (2014) Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect. Jpn J Appl Phys 53(11):114302

3. Jabbar HD, Fakhri MA, Abdulrazzaq MJ (2021) Gallium Nitride -Based Photodiode: A review. Mater Today: Proceedings 42:2829–2834

4. Podolska A, Seeber RM, Mishra UK, Pfleger KDG, Parish G, Nener BD (2012) Detection of biological reactions by AlGaN/GaN biosensor. Commad 2012:75–76

5. Abdul Amir HAA, Fakhri MA, Alwahib AA (2021) Review of GaN optical device characteristics, applications, and optical analysis technology. Mater Today: Proceedings 42:2815–2821

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