Analytical Modeling for a New Structure of Dielectric Pocket-Based Dual Material Double Gate TFET with Gate Oxide Stack
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02229-x.pdf
Reference33 articles.
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5. Kumar MJ, Janardhanan S (2013) Doping-less tunnel field effect transistor: Design and investigation. IEEE Trans Electron Devices 60(10):3285–3290. https://doi.org/10.1109/TED.2013.2276888
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