Improvement of capacitive and resistive memory in WO3 thin film with annealing
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10853-024-09422-w.pdf
Reference53 articles.
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2. Hashemi A, Bahari A (2018) Synthesis and characterization of silanized-SiO2/povidone nanocomposite as a gate insulator: the influence of Si semiconductor film type on the interface traps by deconvolution of Si2s. Curr Appl Phys 18:1546–1552. https://doi.org/10.1016/j.cap.2018.09.014
3. Bahari A, Ghovati M, Hashemi A (2019) Studying of SiO2/capron nanocomposite as a gate dielectric film for improved threshold voltage. Appl Phys A 125:257. https://doi.org/10.1007/s00339-019-2547-3
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5. Zhao G, Yin Y, Peng Y et al (2019) Effect of hydrogen ions in the adsorbed water layer on the resistive switching properties of hexagonal WO3 nanowire. J Appl Phys 126:054303. https://doi.org/10.1063/1.5093277
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