Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices

Published:2023-07-28 Issue:4 Volume:6 Page:
ISSN:2522-0128
Container-title:Advanced Composites and Hybrid Materials
language:en
Short-container-title:Adv Compos Hybrid Mater

Author:

Mahata Chandreswar,Pyo Juyeong,Jeon Beomki,Ismail Muhammad,Moon Janghyuk,Kim Sungjun

Funder

National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Polymers and Plastics,Materials Science (miscellaneous),Ceramics and Composites

Link

https://link.springer.com/content/pdf/10.1007/s42114-023-00713-5.pdf

Reference54 articles.

1. Waser R, Dittmann R, Staikov C, Szot K (2009) Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges. Adv Mater 21:2632–2663. https://doi.org/10.1002/adma.200900375

2. Zahoor F, Azni Zulkifli TZ, Khanday FA (2020) Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications. Nanoscale Res Lett 15:90. https://doi.org/10.1186/s11671-020-03299-9

3. Zhu L, Zhou J, Guo Z, Sun Z (2015) An overview of materials issues in resistive random access memory. J Mater 1:285–295. https://doi.org/10.1016/j.jmat.2015.07.009

4. Zhou L, Bo B, Yan X et al (2018) Brief review of surface passivation on III-V semiconductor. Crystals 8:1–14. https://doi.org/10.3390/cryst8050226

5. Li XY, Park TH, Hyun SD, Hwang CS (2022) Performance improvement of an Al/TiO2/Al electronic bipolar resistive switching memory cell via inserting an ultrathin ZrO2 layer. ACS Appl Electron Mater 4:5351–5360. https://doi.org/10.1021/acsaelm.2c01043

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition;Nano Energy;2024-10

2. Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing;Journal of Alloys and Compounds;2024-10

3. Influence of trace Mn doping on the high-speed shear performance of lead-free alloy/copper solder joints: Experimental and first principles investigation;Surfaces and Interfaces;2024-08

4. Modification of Hydrotalcite Loading Tannic Acid with Organic Silane and Application in Anticorrosive Epoxy Coating;ChemistryOpen;2024-06-28

5. Effects of Non-field Annealing and Magnetic Field Annealing on the Soft Magnetic Properties of Ni-Doped FINEMET Cores;JOM;2024-06-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3