A review of GaN-based optoelectronic devices on silicon substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-014-0169-x.pdf
Reference111 articles.
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3. Stevens KS, Ohtani A, Kinniburgh M et al (1994) Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy. Appl Phys Lett 65:321–323
4. Ishikawa H, Yamamoto K, Egawa T et al (1998) Thermal stability of GaN on (111) Si substrate. J Cryst Growth 189–190:178–182
5. Krost A, Dadgar A (2002) GaN-based optoelectronics on silicon substrates. Mater Sci Eng B 93:77–84
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