GaN-on-Si laser diode: open up a new era of Si-based optical interconnections
Author:
Publisher
Elsevier BV
Subject
Multidisciplinary
Link
http://link.springer.com/article/10.1007/s11434-016-1192-x/fulltext.html
Reference10 articles.
1. Nanolasers grown on silicon;Chen;Nat Photonics,2011
2. Room-temperature InP distributed feedback laser array directly grown on silicon;Wang;Nat Photonics,2015
3. Electrically pumped continuous-wave III–V quantum dot lasers on silicon;Chen;Nat Photonics,2016
4. Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth;Bidnyk;Appl Phys Lett,1998
5. Growth, stimulated emission, photo- and electroluminescence of InGaN/GaN EL-test heterostructures;Lutsenko;Phys Status Solidi C,2002
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1. Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates;Journal of Applied Spectroscopy;2022-01
2. EFFECT OF THE DENSITY OF SURFACE V-DEFECTS ON LASER PROPERTIES OF InGaN/GaN HETEROSCTRUCTURES WITH MULTIPLE QUANTUM WELLS GROWN ON SILICON SUBSTRATES;Journal of Applied Spectroscopy;2021-11-24
3. Performance improvement of InGaN-based laser grown on Si by suppressing point defects;OPT EXPRESS;2019
4. Performance improvement of InGaN-based laser grown on Si by suppressing point defects;Optics Express;2019-08-28
5. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures;Quantum Electronics;2019-06-01
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